| PART |
Description |
Maker |
| 2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA)
CASE 29-4, STYLE 5TO-2 (TO-26AA)
From old datasheet system
JFET Switching
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2N5460 2N5462 ON0061 2N5461 2N5460THRU2N5462 MOTOR |
JFET Amplifier P-Channel
From old datasheet system
CASE 29-4, STYLE 7TO-2 (TO-26AA)
CASE 2904, STYLE 7 TO92 (TO226AA)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
ON Semiconductor
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| 2N5208 |
CASE 29-04STYLE 2 TO-92(TO-226AA)
CASE 29-04,STYLE 2 TO-92(TO-226AA)
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2003 |
Case Outline 55BT-1 / Style 1
|
GHZ Technology
|
| BAS16WT1 ON0115 |
CASE 419-02, STYLE 2 SC-70/SOT-323
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MPSA13_D ON2337 MPSA13 MPSA14 |
Darlington Transistors
From old datasheet system
CASE 29?5, STYLE 1 TO?2 (TO?26AE)
|
Motorola, Inc
ON Semi
|
| RACM40-05S |
40 Watt Enclosed & Open Frame Case Style Single Output
|
Recom International Pow...
|
| BC636 BC640 BC638 ON0157 |
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
High Current Transistors(PNP Silicon)
From old datasheet system
|
ON Semiconductor
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON20 |
From old datasheet system
CASE 3188, STYLE 10 SOT3 (TO?36AB
JFET Switching Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
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